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| 書誌情報 | ファイル |
|---|---|
| Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation Kaneko, Hiromi; Kimoto, Tsunenobu (2011-06-27) APPLIED PHYSICS LETTERS, 98(26) |  |
| Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Sasaki, S.; Kawahara, K.; Feng, G.; Alfieri, G.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
| Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11) | |
| Analytical model for reduction of deep levels in SiC by thermal oxidation Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03) Journal of Applied Physics, 111(5) | |