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| 書誌情報 | ファイル |
|---|---|
| Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 913-916 | |
| Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Negoro, Y; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 617-620 | |
| Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Negoro, Y; Kimoto, T; Matsunami, H (2005-08-15) Journal of Applied Physics, 98(4) |  |
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