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| 書誌情報 | ファイル |
|---|---|
| Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(7A): 4105-4109 | |
| Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 254(1-2): 115-122 | |
| Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1224-1229 |