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| 書誌情報 | ファイル |
|---|---|
| MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation Yano, H; Kimoto, T; Matsunami, H; Bassler, M; Pensl, G (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1109-1112 | |
| 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching Wahab, Q; Kosugi, H; Yano, H; Hallin, C; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1215-1218 | |
| Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Asano, K; Sugawara, Y (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1105-1108 |