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| 書誌情報 | ファイル |
|---|---|
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 | |
| Wide-area homoepitaxial growth of 6H-SiC on nearly on-axis (0001) by chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 149-152 | |
| Uniformity improvement in SiC epitaxial growth by horizontal hot-wall CVD Saitoh, H; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 185-188 |