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| 書誌情報 | ファイル |
|---|---|
| Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01) JOURNAL OF APPLIED PHYSICS, 110(3) |  |
| Analytical model for reduction of deep levels in SiC by thermal oxidation Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03) Journal of Applied Physics, 111(5) | |
| Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers Kimoto, Tsunenobu; Hiyoshi, Toru; Hayashi, Toshihiko; Suda, Jun (2010-10) Journal of Applied Physics, 108(8) | |
| High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime Zippelius, Bernd; Suda, Jun; Kimoto, Tsunenobu (2012-02-01) JOURNAL OF APPLIED PHYSICS, 111(3) | |