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書誌情報	ファイル
N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu (2008) APPLIED PHYSICS LETTERS, 93(19)
Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1)
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11)
N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu (2008-11-10) APPLIED PHYSICS LETTERS, 93(19)
Analytical model for reduction of deep levels in SiC by thermal oxidation Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03) Journal of Applied Physics, 111(5)
Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2012-09) Journal of Applied Physics, 112(6)