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| 書誌情報 | ファイル |
|---|---|
| Rapid production of silicon-containing vapor grown carbon fibers using the liquid pulse injection technique Mukai, SR; Masuda, T; Harada, T; Hashimoto, K (2000) CARBON, 38(13): 1801-1805 | |
| Field emission of polycrystalline diamond films grown by microwave-plasma chemical vapor deposition. I. Effects of surface morphology of diamond Toyama, T; Koide, Y; Murakami, M (2002) DIAMOND AND RELATED MATERIALS, 11(12): 1897-1904 | |
| Low-temperature growth of ZnO thin films by linear source ultrasonic spray chemical vapor deposition Nishinaka, Hiroyuki; Kawaharamura, Toshiyuki; Fujita, Shizuo (2007) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A): 6811-6813 | |
| R&D of diamond films in the Frontier Carbon Technology Project and related topics Kobashi, K; Nishibayashi, Y; Yokota, Y; Ando, Y; Tachibana, T; Kawakami, N; Hayashi, K; Inoue, K; Meguro, K; Imai, H; Furata, H; Hirao, T; Oura, K; Gotoh, Y; Nakahara, H; Tsuji, H; Ishikawa, J; Koeck, FA; Nernanich, RJ; Sakai, T; Sakuma, N; Yoshida, H (2003) DIAMOND AND RELATED MATERIALS, 12(3-7): 233-240 | |
| Preparation of anion-exchange membrane by plasma polymerization and its use in alkaline fuel cells Matsuoka, Koji; Chiba, Satoshi; Iriyama, Yasutoshi; Abe, Takeshi; Matsuoka, Masao; Kikuchi, Kenji; Ogumi, Zempachi (2008) THIN SOLID FILMS, 516(10): 3309-3313 | |
| High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 197-200 | |
| Quantum chemical study of aluminum CVD reaction for titanium nitride (111) surface with terminal fluorine Tachibana, A; Nakamura, K (2000) JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 506: 273-286 | |
| Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910 | |
| SiC epitaxy on non-standard surfaces Matsunami, H; Kimoto, T (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 125-130 | |
| Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design Matsumoto, K; Tachibana, A (2004) JOURNAL OF CRYSTAL GROWTH, 272(1-4): 360-369 |