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書誌情報	ファイル
Structure and formation mechanism of Ge E ' center from divalent defects in Ge-doped SiO2 glass Uchino, T; Takahashi, M; Yoko, T (2000-02-14) PHYSICAL REVIEW LETTERS, 84(7): 1475-1478
Structure and generation mechanism of the peroxy-radical defect in amorphous silica Uchino, T; Takahashi, M; Yoko, T (2001-05-14) PHYSICAL REVIEW LETTERS, 86(20): 4560-4563
E ' centers in amorphous SiO2 revisited: A new look at an old problem Uchino, T; Takahashi, M; Yoko, T (2001-06-11) PHYSICAL REVIEW LETTERS, 86(24): 5522-5525
Photochemical reaction of divalent-germanium center in germanosilicate glasses under intense near-ultraviolet laser excitation: Origin of 5.7 eV band and site selective excitation of divalent-germanium center Takahashi, M; Ichii, K; Tokuda, Y; Uchino, T; Yoko, T; Nishii, J; Fujiwara, T (2002-10-01) JOURNAL OF APPLIED PHYSICS, 92(7): 3442-3446
Photothermal fabrication of microstructures in transparent low-melting media doped with rare earth ions as a light absorber Takahashi, M; Saito, M; Mizuno, M; Kakiuchida, H; Tokuda, Y; Yoko, T (2006-05-08) APPLIED PHYSICS LETTERS, 88(19)
Wavelength dependence of thermo-optic coefficient of organically modified SiO2-ZrO2 hybrid films Kang, ES; Takahashi, M; Tokuda, Y; Yoko, T (2006-09-25) APPLIED PHYSICS LETTERS, 89(13)
Mechanism of electron trapping in Ge-doped SiO2 glass Uchino, T; Takahashi, M; Yoko, T (2001-07-16) APPLIED PHYSICS LETTERS, 79(3): 359-361
Structure and formation mechanism of the E-alpha(') center in amorphous SiO2 Uchino, T; Takahashi, M; Yoko, T (2001-04-30) APPLIED PHYSICS LETTERS, 78(18): 2730-2732
Mechanism of interconversion among radiation-induced defects in amorphous silicon dioxide Uchino, T; Takahashi, M; Yoko, T (2001-02-26) PHYSICAL REVIEW LETTERS, 86(9): 1777-1780
Structure and paramagnetic properties of defect centers in Ge-doped SiO2 glass: Localized and delocalized Ge E ' centers Uchino, T; Takahashi, M; Yoko, T (2000-12-15) PHYSICAL REVIEW B, 62(23): 15303-15306