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書誌情報	ファイル
Structure and formation mechanism of Ge E ' center from divalent defects in Ge-doped SiO2 glass Uchino, T; Takahashi, M; Yoko, T (2000-02-14) PHYSICAL REVIEW LETTERS, 84(7): 1475-1478
Mechanism of photoinduced changes in the structure and optical properties of amorphous As2S3 Uchino, T; Clary, DC; Elliott, SR (2000-10-09) PHYSICAL REVIEW LETTERS, 85(15): 3305-3308
Structure and generation mechanism of the peroxy-radical defect in amorphous silica Uchino, T; Takahashi, M; Yoko, T (2001-05-14) PHYSICAL REVIEW LETTERS, 86(20): 4560-4563
E ' centers in amorphous SiO2 revisited: A new look at an old problem Uchino, T; Takahashi, M; Yoko, T (2001-06-11) PHYSICAL REVIEW LETTERS, 86(24): 5522-5525
Photochemical reaction of divalent-germanium center in germanosilicate glasses under intense near-ultraviolet laser excitation: Origin of 5.7 eV band and site selective excitation of divalent-germanium center Takahashi, M; Ichii, K; Tokuda, Y; Uchino, T; Yoko, T; Nishii, J; Fujiwara, T (2002-10-01) JOURNAL OF APPLIED PHYSICS, 92(7): 3442-3446
Mechanism of electron trapping in Ge-doped SiO2 glass Uchino, T; Takahashi, M; Yoko, T (2001-07-16) APPLIED PHYSICS LETTERS, 79(3): 359-361
Structure and formation mechanism of the E-alpha(') center in amorphous SiO2 Uchino, T; Takahashi, M; Yoko, T (2001-04-30) APPLIED PHYSICS LETTERS, 78(18): 2730-2732
Mechanism of interconversion among radiation-induced defects in amorphous silicon dioxide Uchino, T; Takahashi, M; Yoko, T (2001-02-26) PHYSICAL REVIEW LETTERS, 86(9): 1777-1780
Structure of alkali tellurite glasses from neutron diffraction and molecular orbital calculations Niida, H; Uchino, T; Jin, JS; Kim, SH; Fukunaga, T; Yoko, T (2001-01-01) JOURNAL OF CHEMICAL PHYSICS, 114(1): 459-467
Structure and paramagnetic properties of defect centers in Ge-doped SiO2 glass: Localized and delocalized Ge E ' centers Uchino, T; Takahashi, M; Yoko, T (2000-12-15) PHYSICAL REVIEW B, 62(23): 15303-15306