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書誌情報 | ファイル |
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Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Miyamoto, N; Saitoh, A; Kimoto, T; Matsunami, H; Hishida, Y; Watanabe, M (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1347-1350 | |
Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 | |
Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers Hatayama, T; Yoneda, T; Nakata, T; Watanabe, M; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(12A): L1216-L1218 |