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| 書誌情報 | ファイル |
|---|---|
| Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Wada, A; Kimoto, T; Nishikawa, K; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 85-88 | |
| Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Danno, K; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 355-358 | |
| Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 381-384 |