検索
検索条件の追加:
検索条件を追加することで検索結果を絞り込むことができます。
検索結果表示: 1-3 / 3.
- 前
- 1
- 次
検索結果:
| 書誌情報 | ファイル |
|---|---|
| Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003) APPLIED SURFACE SCIENCE, 216(1-4): 497-501 | |
| Hetero-interface properties of SiO2/4H-SiC on various crystal orientations Matsunami, H; Kimoto, T; Yano, H (2003) IEICE TRANSACTIONS ON ELECTRONICS, E86C(10): 1943-1948 | |
| Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Kimoto, T; Kanzaki, Y; Noborio, M; Kawano, H; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 44(3): 1213-1218 |