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| 書誌情報 | ファイル |
|---|---|
| Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02) APPLIED PHYSICS LETTERS, 98(5) |  |
| Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations Alfieri, G.; Kimoto, T. (2011-03-21) APPLIED PHYSICS LETTERS, 98(12) | |
| Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy Yoshikawa, M.; Ogawa, S.; Inoue, K.; Seki, H.; Tanahashi, Y.; Sako, H.; Nanen, Y.; Kato, M.; Kimoto, T. (2012-02-20) APPLIED PHYSICS LETTERS, 100(8) | |
| Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Sasaki, S.; Kawahara, K.; Feng, G.; Alfieri, G.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
| Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
| Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11) | |
| Engineering the band gap of SiC nanotubes with a transverse electric field Alfieri, G.; Kimoto, T. (2010) APPLIED PHYSICS LETTERS, 97(4) | |
| Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2012-09) Journal of Applied Physics, 112(6) | |
| Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Yan, F.; Devaty, R. P.; Choyke, W. J.; Gali, A.; Kimoto, T.; Ohshima, T.; Pensl, G. (2012-03) APPLIED PHYSICS LETTERS, 100(13) | |