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書誌情報ファイル
Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
  Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005)
  APPLIED PHYSICS LETTERS, 87(5)
Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition
  Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2005)
  JOURNAL OF CRYSTAL GROWTH, 281(2-4): 370-376
Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition
  Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2004)
  SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 205-208
Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
  Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005-08-01)
  Applied Physics Letters, 87(5)
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Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes
  Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005)
  SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 151-154

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