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| 書誌情報 | ファイル |
|---|---|
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002-12-16) Applied Physics Letters, 81(25): 4772-4774 |  |
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002) APPLIED PHYSICS LETTERS, 81(25): 4772-4774 | |
| Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Kimoto, T; Hirao, T; Nakazawa, S; Shiomi, H; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 249(1-2): 208-215 |