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| 書誌情報 | ファイル |
|---|---|
| Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions Nakamura, S; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 256(3-4): 341-346 | |
| In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy Hatayama, T; Fuyuki, T; Nakamura, S; Kurobe, K; Kimoto, T; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 361-364 | |
| Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps Nakamura, S; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 256(3-4): 347-351 |