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| 書誌情報 | ファイル |
|---|---|
| Technological aspects of ion implantation in SiC device processes Negoro, Y; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 599-604 | |
| Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Negoro, Y; Kimoto, T; Matsunami, H (2005) JOURNAL OF APPLIED PHYSICS, 98(4) | |
| Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Negoro, Y; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 617-620 | |
| Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Negoro, Y; Kimoto, T; Matsunami, H (2005-08-15) Journal of Applied Physics, 98(4) |  |
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