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| 書誌情報 | ファイル |
|---|---|
| Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN Okumura, H; Horita, M; Kimoto, T; Suda, J (2008) APPLIED SURFACE SCIENCE, 254(23): 7858-7860 | |
| Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(1AB): L40-L42 | |
| Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 659-662 | |
| Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy Onojima, N; Kaido, J; Suda, J; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1569-1572 |