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| 書誌情報 | ファイル |
|---|---|
| Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Kimoto, T; Chen, ZY; Tamura, S; Nakamura, S; Onojima, N; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319 | |
| High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 |
絞り込み
キーワード
発行日
- 3 2001