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| 書誌情報 | ファイル |
|---|---|
| High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 197-200 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 | |
| Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Kimoto, T; Hashimoto, K; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295 | |
| Epitaxial growth of 4H-SiC{0001} and reduction of deep levels Kimoto, T; Wada, K; Danno, K (2006) SUPERLATTICES AND MICROSTRUCTURES, 40(4-6): 225-232 |