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書誌情報	ファイル
Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1)
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11)
Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01) JOURNAL OF APPLIED PHYSICS, 110(3)
Analytical model for reduction of deep levels in SiC by thermal oxidation Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03) Journal of Applied Physics, 111(5)
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers Kimoto, Tsunenobu; Hiyoshi, Toru; Hayashi, Toshihiko; Suda, Jun (2010-10) Journal of Applied Physics, 108(8)
High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime Zippelius, Bernd; Suda, Jun; Kimoto, Tsunenobu (2012-02-01) JOURNAL OF APPLIED PHYSICS, 111(3)
Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2012-09) Journal of Applied Physics, 112(6)