1. Kyoto University Research Information Repository

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書誌情報ファイル
Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
  Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117
High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition
  Nakamura, S; Kimoto, T; Matsunami, H (2002)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(5A): 2987-2988
Specular surface morphology of 4H-SiC epilayers grown on (1120) face
  Chen, ZY; Kimoto, T; Matsunami, H (1999)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38(12A): L1375-L1378
Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
  Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003)
  IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323
Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC
  Okada, T; Kimoto, T; Yamai, K; Matsunami, H; Inoko, F (2003)
  MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 361(1-2): 67-74
Effect of C/Si ratio on spiral growth on 6H-SiC (0001)
  Nakamura, S; Kimoto, T; Matsunami, H (2003)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(7B): L846-L848

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