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| 書誌情報 | ファイル |
|---|---|
| Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 183-186 | |
| Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 205-208 | |
| Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai, S; Wagner, G; Shishkin, E; Choyke, WJ; Devaty, RP; Zhang, M; Pirouz, P; Kimoto, T (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 589-592 | |
| High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322 | |
| Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 175-178 | |
| Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 151-154 | |
| Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 161-164 |