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| 書誌情報 | ファイル |
|---|---|
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003) APPLIED SURFACE SCIENCE, 216(1-4): 497-501 | |
| High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes Kimoto, T; Fujimiza, K; Shiomi, H; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(1A-B): L13-L16 | |
| Hetero-interface properties of SiO2/4H-SiC on various crystal orientations Matsunami, H; Kimoto, T; Yano, H (2003) IEICE TRANSACTIONS ON ELECTRONICS, E86C(10): 1943-1948 | |
| Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Kimoto, T; Hashimoto, K; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295 |