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| 書誌情報 | ファイル |
|---|---|
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 | |
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Kawano, H; Kimoto, T; Suda, J; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 809-812 | |
| Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Fujihira, K; Tamura, S; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(1): 150-154 | |
| Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003) IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323 | |
| High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes Kimoto, T; Fujimiza, K; Shiomi, H; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(1A-B): L13-L16 | |
| High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322 | |
| 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET Kimoto, T; Kawano, H; Suda, J (2005) IEEE ELECTRON DEVICE LETTERS, 26(9): 649-651 |