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| 書誌情報 | ファイル |
|---|---|
| Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Kimoto, T; Chen, ZY; Tamura, S; Nakamura, S; Onojima, N; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319 | |
| Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H (2001) JOURNAL OF APPLIED PHYSICS, 89(11): 6105-6109 | |
| High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 | |
| Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition Kimoto, T; Nakazawa, S; Hashimoto, K; Matsunami, H (2001) APPLIED PHYSICS LETTERS, 79(17): 2761-2763 | |
| A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face Yano, H; Hirao, T; Kimoto, T; Matsunami, H (2001) APPLIED PHYSICS LETTERS, 78(3): 374-376 |