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| 書誌情報 | ファイル |
|---|---|
| Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009-04) PHYSICAL REVIEW B, 79(15) |  |
| Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009) PHYSICAL REVIEW B, 79(15) | |
| Disorder-induced rapid localization of electron-hole plasmas in highly excited InxGa1-xN mixed crystals Hirano, Daisuke; Tayagaki, Takeshi; Kanemitsu, Yoshihiko (2008-02) Physical Review B, 77(7) | |
| Composition dependent dynamics of biexciton localization in AlxGa1-xN mixed crystals Hirano, Daisuke; Tayagaki, Takeshi; Yamada, Yoichi; Kanemitsu, Yoshihiko (2009-08) Physical Review B, 80(7) | |
| Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique Funato, Mitsuru; Kotani, Teruhisa; Kondou, Takeshi; Kawakami, Yoichi (2012-04) Applied Physics Letters, 100(16) | |
| Determination of electron and hole lifetimes of rutile and anatase TiO2 single crystals Yamada, Yasuhiro; Kanemitsu, Yoshihiko (2012-09-27) Applied Physics Letters, 101(13) | |