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Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02) APPLIED PHYSICS LETTERS, 98(5) | |
Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation Kaneko, Hiromi; Kimoto, Tsunenobu (2011-06-27) APPLIED PHYSICS LETTERS, 98(26) | |
Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Sasaki, S.; Kawahara, K.; Feng, G.; Alfieri, G.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11) | |
Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01) JOURNAL OF APPLIED PHYSICS, 110(3) | |
Analytical model for reduction of deep levels in SiC by thermal oxidation Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03) Journal of Applied Physics, 111(5) | |
Engineering the band gap of SiC nanotubes with a transverse electric field Alfieri, G.; Kimoto, T. (2010) APPLIED PHYSICS LETTERS, 97(4) | |
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers Kimoto, Tsunenobu; Hiyoshi, Toru; Hayashi, Toshihiko; Suda, Jun (2010-10) Journal of Applied Physics, 108(8) | |
High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime Zippelius, Bernd; Suda, Jun; Kimoto, Tsunenobu (2012-02-01) JOURNAL OF APPLIED PHYSICS, 111(3) |
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