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書誌情報ファイル
Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers
  Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02)
  APPLIED PHYSICS LETTERS, 98(5)
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Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
  Kaneko, Hiromi; Kimoto, Tsunenobu (2011-06-27)
  APPLIED PHYSICS LETTERS, 98(26)
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Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC
  Sasaki, S.; Kawahara, K.; Feng, G.; Alfieri, G.; Kimoto, T. (2011-01-01)
  JOURNAL OF APPLIED PHYSICS, 109(1)
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Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers
  Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-01-01)
  JOURNAL OF APPLIED PHYSICS, 109(1)
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Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers
  Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01)
  JOURNAL OF APPLIED PHYSICS, 109(11)
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Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
  Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01)
  JOURNAL OF APPLIED PHYSICS, 110(3)
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Analytical model for reduction of deep levels in SiC by thermal oxidation
  Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03)
  Journal of Applied Physics, 111(5)
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Engineering the band gap of SiC nanotubes with a transverse electric field
  Alfieri, G.; Kimoto, T. (2010)
  APPLIED PHYSICS LETTERS, 97(4)
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers
  Kimoto, Tsunenobu; Hiyoshi, Toru; Hayashi, Toshihiko; Suda, Jun (2010-10)
  Journal of Applied Physics, 108(8)
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High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime
  Zippelius, Bernd; Suda, Jun; Kimoto, Tsunenobu (2012-02-01)
  JOURNAL OF APPLIED PHYSICS, 111(3)
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