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| 書誌情報 | ファイル |
|---|---|
| Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Negoro, Y; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 617-620 | |
| Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film Okada, T; Kimoto, T; Noda, H; Ebisui, T; Matsunami, H; Inoko, F (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(11A): 6320-6326 | |
| Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers Hatayama, T; Yoneda, T; Nakata, T; Watanabe, M; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(12A): L1216-L1218 | |
| 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication Onojima, N; Suda, J; Kimoto, T; Matsunami, H (2003-12-22) Applied Physics Letters, 83(25): 5208-5210 |  |
| Anisotropy in breakdown field of 4H-SiC Nakamura, S; Kumagai, H; Kimoto, T; Matsunami, H (2002-05-06) Applied Physics Letters, 80(18): 3355-3357 | |
| Optical cross sections of deep levels in 4H-SiC Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T; Passler, R (2006-09-01) JOURNAL OF APPLIED PHYSICS, 100(5) | |
| Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates Armitage, R; Suda, J; Kimoto, T (2006-01-02) Applied Physics Letters, 88(1) | |
| Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Negoro, Y; Kimoto, T; Matsunami, H (2005-08-15) Journal of Applied Physics, 98(4) | |
| Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Kamiyama, S; Maeda, T; Nakamura, Y; Iwaya, M; Amano, H; Akasaki, I; Kinoshita, H; Furusho, T; Yoshimoto, M; Kimoto, T; Suda, J; Henry, A; Ivanov, IG; Bergman, JP; Monemar, B; Onuma, T; Chichibu, SF (2006-05-01) Journal of Applied Physics, 99(9) | |
| Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003-05) IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323 | |