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| 書誌情報 | ファイル |
|---|---|
| Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02) APPLIED PHYSICS LETTERS, 98(5) |  |
| Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01) JOURNAL OF APPLIED PHYSICS, 110(3) | |
| Triple Shockley type stacking faults in 4H-SiC epilayers Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2009-03) APPLIED PHYSICS LETTERS, 94(9) | |
| Triple Shockley type stacking faults in 4H-SiC epilayers Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2009) APPLIED PHYSICS LETTERS, 94(9) | |
| Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Yan, F.; Devaty, R. P.; Choyke, W. J.; Gali, A.; Kimoto, T.; Ohshima, T.; Pensl, G. (2012-03) APPLIED PHYSICS LETTERS, 100(13) | |