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書誌情報 | ファイル |
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Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009-04) PHYSICAL REVIEW B, 79(15) | |
Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69) Banal, R. G.; Funato, M.; Kawakami, Y. (2009-03) PHYSICAL REVIEW B, 79(12) | |
Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009) PHYSICAL REVIEW B, 79(15) | |
Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69) Banal, R. G.; Funato, M.; Kawakami, Y. (2009) PHYSICAL REVIEW B, 79(12) | |
Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching Kawakami, Y.; Kaneta, A.; Su, L.; Zhu, Y.; Okamoto, K.; Funato, M.; Kikuchi, A.; Kishino, K. (2010) JOURNAL OF APPLIED PHYSICS, 107(2) | |
Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching Kawakami, Y.; Kaneta, A.; Su, L.; Zhu, Y.; Okamoto, K.; Funato, M.; Kikuchi, A.; Kishino, K. (2010-01) JOURNAL OF APPLIED PHYSICS, 107(2) |