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| 書誌情報 | ファイル |
|---|---|
| Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009-04) PHYSICAL REVIEW B, 79(15) |  |
| Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69) Banal, R. G.; Funato, M.; Kawakami, Y. (2009-03) PHYSICAL REVIEW B, 79(12) | |
| Near-field evidence of local polarized emission centers in InGaN/GaN materials Micheletto, Ruggero; Allegrini, Maria; Kawakami, Yoichi (2009-11) APPLIED PHYSICS LETTERS, 95(21) | |
| Near-field evidence of local polarized emission centers in InGaN/GaN materials Micheletto, Ruggero; Allegrini, Maria; Kawakami, Yoichi (2009) APPLIED PHYSICS LETTERS, 95(21) | |
| Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009) PHYSICAL REVIEW B, 79(15) | |
| Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69) Banal, R. G.; Funato, M.; Kawakami, Y. (2009) PHYSICAL REVIEW B, 79(12) |