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| 書誌情報 | ファイル |
|---|---|
| Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 151-154 | |
| Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters Funaki, T; Balda, JC; Junghans, J; Jangwanitlert, A; Mounce, S; Barlow, FD; Mantooth, HA; Kimoto, T; Hikihara, T (2005) IEICE ELECTRONICS EXPRESS, 2(3): 97-102 | |
| Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Danno, K; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 355-358 | |
| 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET Kimoto, T; Kawano, H; Suda, J (2005) IEEE ELECTRON DEVICE LETTERS, 26(9): 649-651 | |
| Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 381-384 | |
| 4H-SiC epitaxial growth on SiC substrates with various off-angles Saitoh, H; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 89-92 | |
| Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Negoro, Y; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 617-620 | |
| Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Negoro, Y; Kimoto, T; Matsunami, H (2005-08-15) Journal of Applied Physics, 98(4) |  |