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書誌情報ファイル
Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask
  Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910
Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition
  Kimoto, T; Chen, ZY; Tamura, S; Nakamura, S; Onojima, N; Matsunami, H (2001)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319
High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes
  Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322
High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition
  Nakazawa, S; Kimoto, T; Hashimoto, K; Matsunami, H (2002)
  JOURNAL OF CRYSTAL GROWTH, 237: 1213-1218
Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition
  Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376
Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8)
  Kimoto, T; Hashimoto, K; Matsunami, H (2003)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295