検索


適用済条件:


検索をやり直す
検索条件の追加:

検索条件を追加することで検索結果を絞り込むことができます。


検索結果表示: 11-20 / 23.
検索結果:
書誌情報ファイル
Single crystal growth of 3C-SiC on 15R-SiC
  Nakamura, S; Hatayama, T; Nishino, K; Kimoto, T; Matsunami, H (1999)
  COMPOUND SEMICONDUCTORS 1998, 162: 717-722
In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy
  Hatayama, T; Fuyuki, T; Nakamura, S; Kurobe, K; Kimoto, T; Matsunami, H (2000)
  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 361-364
Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
  Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003)
  IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323
Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps
  Nakamura, S; Kimoto, T; Matsunami, H (2003)
  JOURNAL OF CRYSTAL GROWTH, 256(3-4): 347-351
Wide-area homoepitaxial growth of 6H-SiC on nearly on-axis (0001) by chemical vapor deposition
  Nakamura, S; Kimoto, T; Matsunami, H (2002)
  SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 149-152
Anisotropy in breakdown field of 4H-SiC
  Nakamura, S; Kumagai, H; Kimoto, T; Matsunami, H (2002)
  APPLIED PHYSICS LETTERS, 80(18): 3355-3357
Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces
  Nakamura, S; Kimoto, T; Matsunami, H (2004)
  SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 163-168
Optical cross sections of deep levels in 4H-SiC
  Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T; Passler, R (2006)
  JOURNAL OF APPLIED PHYSICS, 100(5)
Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition
  Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T (2005)
  SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 381-384
Effect of C/Si ratio on spiral growth on 6H-SiC (0001)
  Nakamura, S; Kimoto, T; Matsunami, H (2003)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(7B): L846-L848