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| 書誌情報 | ファイル |
|---|---|
| Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Kimoto, T; Hashimoto, K; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295 | |
| Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Kimoto, T; Hirao, T; Nakazawa, S; Shiomi, H; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 249(1-2): 208-215 | |
| 4H-SiC (11(2)over-bar-0) epitaxial growth Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 189-192 | |
| Epitaxial growth of 4H-SiC{0001} and reduction of deep levels Kimoto, T; Wada, K; Danno, K (2006) SUPERLATTICES AND MICROSTRUCTURES, 40(4-6): 225-232 | |
| 4H-SiC epitaxial growth on SiC substrates with various off-angles Saitoh, H; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 89-92 |