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| 書誌情報 | ファイル |
|---|---|
| Evidence for a hydrogen-related defect in implanted p-type 4H-SiC Alfieri, G; Kimoto, T (2008) NEW JOURNAL OF PHYSICS, 10 | |
| Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 183-186 | |
| Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Nakamura, S; Kimoto, T; Matsunami, H; Tanaka, S; Teraguchi, N; Suzuki, A (2000) APPLIED PHYSICS LETTERS, 76(23): 3412-3414 | |
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 | |
| MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation Yano, H; Kimoto, T; Matsunami, H; Bassler, M; Pensl, G (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1109-1112 | |
| High temperature deep level transient spectroscopy investigations of n-type 4H-SiC epitaxial layers Schoner, A; Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 387-390 | |
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 197-200 | |
| Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes Kimoto, T; Danno, K; Fujihira, K; Shiomi, H; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 197-200 | |
| Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(7A): 4105-4109 |