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| 書誌情報 | ファイル |
|---|---|
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 | |
| Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition Danno, K; Hashimoto, K; Saitoh, H; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43(7B): L969-L971 | |
| High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition Nakazawa, S; Kimoto, T; Hashimoto, K; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1213-1218 | |
| Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Kimoto, T; Hashimoto, K; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295 | |
| Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition Kimoto, T; Nakazawa, S; Hashimoto, K; Matsunami, H (2001) APPLIED PHYSICS LETTERS, 79(17): 2761-2763 |