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| 書誌情報 | ファイル |
|---|---|
| Short-Channel Effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 821-824 | |
| High channel mobility in inversion layer of SiC MOSFETs for power switching transistors Yano, H; Hirao, T; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39(4B): 2008-2011 | |
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 | |
| Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Kawano, H; Kimoto, T; Suda, J; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 809-812 | |
| Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Kimoto, T; Kanzaki, Y; Noborio, M; Kawano, H; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 44(3): 1213-1218 | |
| High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient Kanzaki, Y; Kinbara, H; Kosugi, H; Suda, J; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1429-1432 | |
| Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 | |
| 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) Kaido, J; Kimoto, T; Suda, J; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1409-1412 |
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