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| 書誌情報 | ファイル |
|---|---|
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Miyamoto, N; Saitoh, A; Kimoto, T; Matsunami, H; Hishida, Y; Watanabe, M (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1347-1350 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 | |
| High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1273-1276 | |
| Robust 4H-SiC pn diodes fabricated using (1120) face Negoro, Y; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 471-476 | |
| Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 913-916 | |
| Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers Hatayama, T; Yoneda, T; Nakata, T; Watanabe, M; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(12A): L1216-L1218 |
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