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| 書誌情報 | ファイル |
|---|---|
| Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02) APPLIED PHYSICS LETTERS, 98(5) |  |
| Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations Alfieri, G.; Kimoto, T. (2011-03-21) APPLIED PHYSICS LETTERS, 98(12) | |
| Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation Kaneko, Hiromi; Kimoto, Tsunenobu (2011-06-27) APPLIED PHYSICS LETTERS, 98(26) | |
| Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Sasaki, S.; Kawahara, K.; Feng, G.; Alfieri, G.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
| Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
| Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11) | |
| Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01) JOURNAL OF APPLIED PHYSICS, 110(3) | |
| Structural properties and phase transitions in a silica clathrate Y. Liang; F. O. Ogundare; C. R. Miranda; J. K. Christie; S. Scandolo (2011-02) JOURNAL OF CHEMICAL PHYSICS, 134(7) | |
| Thermal and shock induced modification inside a silica glass by focused femtosecond laser pulse Sakakura, Masaaki; Terazima, Masahide; Shimotsuma, Yasuhiko; Miura, Kiyotaka; Hirao, Kazuyuki (2011-01) Journal of Applied Physics, 109(2) | |