1. Kyoto University Research Information Repository

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書誌情報ファイル
Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN
  Okumura, H; Horita, M; Kimoto, T; Suda, J (2008)
  APPLIED SURFACE SCIENCE, 254(23): 7858-7860
Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
  Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117
Short-Channel Effects in 4H-SiC MOSFETs
  Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T; Matsunami, H (2005)
  SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 821-824
Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure
  Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(1AB): L40-L42
Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition
  Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002)
  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 659-662
4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
  Onojima, N; Suda, J; Kimoto, T; Matsunami, H (2003)
  APPLIED PHYSICS LETTERS, 83(25): 5208-5210
SiC lateral super-junction diodes fabricated by epitaxial growth
  Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2002)
  SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 859-862
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
  Armitage, R; Suda, J; Kimoto, T (2006)
  APPLIED PHYSICS LETTERS, 88(1)
Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
  Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962
Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication
  Kawano, H; Kimoto, T; Suda, J; Matsunami, H (2005)
  SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 809-812

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