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| 書誌情報 | ファイル |
|---|---|
| Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 783-786 | |
| Electrical activation of high-concentration aluminum implanted in 4H-SiC Negoro, Y; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004) JOURNAL OF APPLIED PHYSICS, 96(9): 4916-4922 | |
| Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature Okada, T; Negoro, Y; Kimoto, T; Okamoto, K; Kujime, N; Tanaka, N; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(10): 6884-6889 | |
| Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Negoro, Y; Kimoto, T; Matsunami, H (2004) APPLIED PHYSICS LETTERS, 85(10): 1716-1718 | |
| Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Negoro, Y; Kimoto, T; Matsunami, H (2005) JOURNAL OF APPLIED PHYSICS, 98(4) | |
| Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 | |
| Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004) JOURNAL OF APPLIED PHYSICS, 96(1): 224-228 | |
| High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1273-1276 | |
| Robust 4H-SiC pn diodes fabricated using (1120) face Negoro, Y; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 471-476 | |
| Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics Negoro, Y; Kimoto, T; Kataoka, M; Takeuchi, Y; Malhan, RK; Matsunami, H (2006) MICROELECTRONIC ENGINEERING, 83(1): 27-29 |
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