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| 書誌情報 | ファイル |
|---|---|
| Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN Okumura, H; Horita, M; Kimoto, T; Suda, J (2008) APPLIED SURFACE SCIENCE, 254(23): 7858-7860 | |
| Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(1AB): L40-L42 | |
| Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 659-662 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition Danno, K; Kimoto, T; Asano, K; Sugawara, Y; Matsunami, H (2005) JOURNAL OF ELECTRONIC MATERIALS, 34(4): 324-329 | |
| Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Fujihira, K; Tamura, S; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(1): 150-154 | |
| Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition Danno, K; Hashimoto, K; Saitoh, H; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43(7B): L969-L971 | |
| Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy Onojima, N; Kaido, J; Suda, J; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1569-1572 | |
| Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters Funaki, T; Balda, JC; Junghans, J; Jangwanitlert, A; Mounce, S; Barlow, FD; Mantooth, HA; Kimoto, T; Hikihara, T (2005) IEICE ELECTRONICS EXPRESS, 2(3): 97-102 | |
| Robust 4H-SiC pn diodes fabricated using (1120) face Negoro, Y; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 471-476 |
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