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| 書誌情報 | ファイル |
|---|---|
| Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) Nakamura, S; Kimoto, T; Matsunami, H (2004) JOURNAL OF CRYSTAL GROWTH, 270(3-4): 455-461 | |
| Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2005) JOURNAL OF CRYSTAL GROWTH, 281(2-4): 370-376 | |
| Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 255(1-2): 136-144 | |
| Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps Nakamura, S; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 256(3-4): 347-351 | |
| Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 254(1-2): 115-122 | |
| High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition Nakazawa, S; Kimoto, T; Hashimoto, K; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1213-1218 | |
| Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Kimoto, T; Hirao, T; Nakazawa, S; Shiomi, H; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 249(1-2): 208-215 | |
| Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1224-1229 |