検索
検索条件の追加:
検索条件を追加することで検索結果を絞り込むことができます。
検索結果表示: 1-7 / 7.
- 前
- 1
- 次
検索結果:
| 書誌情報 | ファイル |
|---|---|
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-01-14) Applied Physics Letters, 80(2): 240-242 |  |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) APPLIED PHYSICS LETTERS, 80(2): 240-242 | |
| Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 783-786 | |
| Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 | |
| High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1273-1276 |