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| 書誌情報 | ファイル |
|---|---|
| Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 183-186 | |
| Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(1AB): L40-L42 | |
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 | |
| Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 659-662 | |
| SiC lateral super-junction diodes fabricated by epitaxial growth Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 859-862 | |
| High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(5A): 2987-2988 | |
| Wide-area homoepitaxial growth of 6H-SiC on nearly on-axis (0001) by chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 149-152 | |
| Anisotropy in breakdown field of 4H-SiC Nakamura, S; Kumagai, H; Kimoto, T; Matsunami, H (2002) APPLIED PHYSICS LETTERS, 80(18): 3355-3357 | |
| Anisotropy in breakdown field of 4H-SiC Nakamura, S; Kumagai, H; Kimoto, T; Matsunami, H (2002-05-06) Applied Physics Letters, 80(18): 3355-3357 |  |