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| 書誌情報 | ファイル |
|---|---|
| Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy Danno, K; Kimoto, T; Matsunami, H (2005-03-21) Applied Physics Letters, 86(12) |  |
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 | |
| Short-Channel Effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 821-824 | |
| Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910 | |
| Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005) APPLIED PHYSICS LETTERS, 87(5) | |
| Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2005) JOURNAL OF CRYSTAL GROWTH, 281(2-4): 370-376 | |
| Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition Danno, K; Kimoto, T; Asano, K; Sugawara, Y; Matsunami, H (2005) JOURNAL OF ELECTRONIC MATERIALS, 34(4): 324-329 | |
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 | |
| Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Kawano, H; Kimoto, T; Suda, J; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 809-812 | |
| Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) Armitage, R; Nishizono, K; Suda, J; Kimoto, T (2005) JOURNAL OF CRYSTAL GROWTH, 284(3-4): 369-378 |