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| 書誌情報 | ファイル |
|---|---|
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510 | |
| Specular surface morphology of 4H-SiC epilayers grown on (1120) face Chen, ZY; Kimoto, T; Matsunami, H (1999) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38(12A): L1375-L1378 | |
| Single crystal growth of 3C-SiC on 15R-SiC Nakamura, S; Hatayama, T; Nishino, K; Kimoto, T; Matsunami, H (1999) COMPOUND SEMICONDUCTORS 1998, 162: 717-722 | |
| Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T; Miyamoto, N; Matsunami, H (1999-03) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 471-477 |  |
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999-03) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510 | |
| Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999) COMPOUND SEMICONDUCTORS 1998, 162: 723-728 | |
| Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T; Miyamoto, N; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 471-477 |